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radiation hardened irhlnm87y20 logic level power mosfet surface mount (smd-0.2) www.irf.com 1 20v, n-channel technology product summary part number radiation level r ds(on) i d irhlnm87y20 100k rads (si) 15m ? 17a* IRHLNM83Y20 300k rads (si) 15m ? 17a* for footnotes refer to the last page features: 5v cmos and ttl compatible fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed surface mount light weight esd rating: class 1b per mil-std-750, method 1020 international rectifier?s r8 tm logic level power mosfets provide simple solution to interfacing cmos and ttl control circuits to power devices in space and other radiation environments.the threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.this is achieved while maintaining single event gate rupture and single event burnout immunity. the device is ideal when used to interface directly with most logic gates, linear ic?s, micro-controllers, and other device types that operate from a 3.3-5v source. it may also be used to increase the output current of a pwm, voltage comparator or an operational amplifier where the logic level drive signal is available.
absolute maximum ratings parameter units i d @v gs = 4.5v,t c = 25c continuous drain current 17* i d @v gs = 4.5v,t c = 100c continuous drain current 17* i dm pulsed drain current 68 p d @ t c = 25c max. power dissipation 36 w linear derating factor 0.3 w/c v gs gate-to-source voltage 12 v e as single pulse avalanche energy 37 mj i ar avalanche current 17 a e ar repetitive avalanche energy 3.6 mj dv/dt peak diode recovery dv/dt 3.75 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 0.25 (typical) g pre-irradiation c a smd-0.2 (metal lid) pd-97811
irhlnm87y20 pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 17* i sm pulse source current (body diode) ?? 68 v sd diode forward voltage ? ? 1.0 v t j = 25c, i s = 17a, v gs = 0v t rr reverse recovery time ? ? 41 ns t j = 25c, i f = 17a, di/dt 100a/ s q rr reverse recovery charge ? ? 33 nc v dd 20v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 20 ? ? v v gs = 0v, i d = 250 a ? bv dss / ? t j temperature coefficient of breakdown ? 0.028 ? v/c reference to 25c, i d = 250 a voltage r ds(on) static drain-to-source on-state ? 12 15 v gs = 4.5v, i d = 17a* resistance ? 11 14 v gs = 7.0v, i d = 17a* v gs(th) gate threshold voltage 1.0 ? 2.3 v v ds = v gs , i d = 250 a ? v gs(th) / ? t j gate threshold voltage coefficient ? -4.2 ? mv/c g fs forward transconductance 20 ? ? s v ds = 15v, i ds = 17a i dss zero gate voltage drain current ? ? 1.0 v ds = 16v ,v gs = 0v ??10 v ds = 16v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 12v i gss gate-to-source leakage reverse ? ? -100 v gs = -12v q g total gate charge ? 18 24 v gs = 5.5v, i d = 17a q gs gate-to-source charge ? 5.0 7.2 nc v ds = 10v q gd gate-to-drain (?miller?) charge ? 4.0 6.3 t d (on) turn-on delay time ? 18 24 v dd = 10v, i d = 17a t r rise time ? 73 150 v gs = 5.5v, r g = 2.35 ? t d (off) turn-off delay time ? 24 32 t f fall time ? 10 18 l s + l d total inductance ? 1.0 ? ciss input capacitance ? 2336 ? v gs = 0v, v ds = 20v c oss output capacitance ? 596 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 147 ? na nh ns a measured from the center of drain pad to center of source pad r g gate resistance 0.76 ? f = 1.0mhz, open drain thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 3.5 c/w
m ?
www.irf.com 3 pre-irradiation irhlnm87y20 international rectifier radiation hardened mosfets are tested to verify their radiation hardness capabil- ity. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-39 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. fig a. typical single event effect, safe operating area for footnotes refer to the last page table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter upto 300k rads (si) 1 units test conditions min max bv dss drain-to-source breakdown voltage 20 ? v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 1.0 2.3 v gs = v ds , i d = 250a i gss gate-to-source leakage forward ? 100 na v gs = 12v i gss gate-to-source leakage reverse ? -100 v gs = -12v i dss zero gate voltage drain current ? 1.0 a v ds = 16v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-39) ? 32 m ? v gs = 4.5v, i d = 10.2a r ds(on) static drain-to-source on-state v sd diode forward voltage ? 1.0 v v gs = 0v, i d = 17a resistance (smd-0.2) ? 15 m ? v gs = 4.5v, i d = 17a 1. part numbers irhlnm87y20, IRHLNM83Y20 table 2. typical single event effect safe operating area let ener gy ran g evds (v) ( mev/ ( m g /cm 2 )) ( mev ) ( m ) @vgs= @vgs= @vgs= @vgs= @vgs= @vgs= 0v -1v -2v -3v -5v -10v 37 5% 298 5% 38 5% 18 18 8 4 60 5% 320 5% 32 7.5% 18 18 15 12 8 - 81 5% 375 7.5% 28 7.5% 18 18 12 6 - 0 4 8 12 16 20 -10 -8 -6 -4 -2 0 bias vgs (v) bias vds (v) let=37 5% let=60 5% let=81 5%
irhlnm87y20 pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width tj = 25c vgs top 10v 7.0v 5.5v 4.5v 4.0v 3.5v 3.0v 2.5v bottom 2.25v 2..25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 20 s pulse width, tj =150c 2.25v vgs top 10v 7.0v 5.5v 4.5v 4.0v 3.5v 3.0v 2.5v bottom 2.25v 11.522.533.54 v gs , gate-to-source voltage (v) 01 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 20v 2 0 s pulse width t j = 150c t j = 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) v gs = 4.5v i d = 17a
www.irf.com 5 pre-irradiation irhlnm87y20 fig 7. typical drain-to-source breakdown voltage vs temperature fig 8. typical threshold voltage vs temperature fig 5. typical on-resistance vs gate voltage fig 6. typical on-resistance vs drain current -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 0 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a i d = 250a i d = 1.0ma i d = 150ma 0 2 4 6 8 10 v gs, gate -to -source voltage (v) 0 5 10 15 20 25 30 35 40 45 50 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 17a t j = 25c t j = 150c 0 10 20 30 40 50 60 70 i d , drain current (a) 0 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c ( m ? ) t j = 25c t j = 150c v gs = 4.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 30 32 34 36 38 40 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) i d = 250
irhlnm87y20 pre-irradiation 6 www.irf.com typical source-to-drain diode forward voltage
typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage maximum drain current vs. case temperature 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 3000 3500 4000 4500 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1.0 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 2 5 c 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 45 i d , d r a i n c u r r e n t ( a ) limited by package 0 4 8 1216202428323640 q g, total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 5.0v i d = 17a for test circuit see figure 17
www.irf.com 7 pre-irradiation irhlnm87y20 fig 14. maximum avalanche energy vs. drain current fig 15. maximum effective transient thermal impedance, junction-to-case maximum safe operating area 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.6a 10.8a bottom 17a 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc p t t dm 1 2 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by rds(on) 100 s dc
irhlnm87y20 pre-irradiation 8 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17b. gate charge test circuit fig 17a. basic gate charge waveform v ds 90% 10% v gs t d(on) t r t d(off) t f fig 16a. unclamped inductive test circuit fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 18a. switching time test circuit fig 18b. switching time waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs
1

0.1 % + -
www.irf.com 9 pre-irradiation irhlnm87y20 pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 16 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 20v, starting t j = 25c, l= 0.26mh peak i l = 17a, v gs = 12v i sd 17a, di/dt 419a/ s, v dd 20v, t j 150c footnotes: case outline and dimensions ? smd-0.2 (metal lid) 2.69 [.106] max. 5.74 [.226] 5.08 [.200] 8.15 [.321] 7.75 [.305] top bottom 32 1 2.19 [.086] 1.93 [.076] 1.02 [.040] 0.76 [.030] 4x 0.25 [.010] ref. 0.83 [.032] ref. 1.02 [.040] 0.76 [.030] 4.67 [.184] 4.42 [.174] 3x 0.25 [.010] ref. 5.16 [203] 4.90 [.193] 2x 2.13 [.084] 1.88 [.074] 2x 2x notes: 1. dimensioning & tolerancing per asme y14.5m-1994. 2. controlling dimension: inch. 3. dimensions are shown in millimeters [inches]. pad assignment 1 = drain 2 = gate 3 = source ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/2013 switching speed maximum limits are based on manufacturing test equipment and capability.

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